HRU120N10K

HRD120N10K_HRU120N10K HRD120N10K / HRU120N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 65 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 10 mΩ ID = 73 A D-PAK I-PAK 2 1 3 HRD120N10K 1 2 3 HRU120N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TA = 25℃)* Power Dissipation (TC = 25℃) - Derate above 25℃ 100 73 * 51 * 200 * ±25 265 11 3 110 0.73 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 * Drain current limited by maximum junction temperature Units V A A A V mJ mJ W W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient* RθJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ. ---- Max. 1.4 50 110 Units ℃/W ◎ SEMIHOW REV.A0,December 2014 HRD120N10K_HRU120N10K Electrical Characteristics TJ=25 °C u...