N-Channel MOSFET
HRD13N10K_HRU13N10K
HRD13N10K / HRU13N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Ava...
Description
HRD13N10K_HRU13N10K
HRD13N10K / HRU13N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 20 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 85 Pȍ (Typ.) @VGS=10V Lower RDS(ON) : 135 Pȍ (Typ.) @VGS=4.5V Built-in ESD Diode 100% Avalanche Tested
Jan 2015
BVDSS = 100 V RDS(on) typ = 85 Pȍ ID = 3.5 A
D-PAK I-PAK
2
1 3
HRD13N10K
1
2 3
HRU13N10K
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 70)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25) - Derate above 25
100 3.5 2.8 14.0 ρ16 40 3.5 2.5 37 0.3
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Thermal Resistance Characteristics
Symbol
Parameter
RșJC RșJA
Junction-to-Case Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 3.4 50 110
Units V A A A V mJ A W W
W/
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͣ͝ͻΒΟ͑ͣͦ͑͢͡
HRD13N10K_HRU13N10K
Electrical Characteristics TJ=25 qC unless otherwise specified
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