HRU80N06K

HRD80N06K_HRU80N06K HRD80N06K / HRU80N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 90 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 6.3 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 6.3mΩ ID = 114 A D-PAK I-PAK 2 1 3 HRD80N06K 1 2 3 HRU80N06K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TA = 25℃)* Power Dissipation (TC = 25℃) - Derate above 25℃ 60 114 * 80 * 400 * ±25 340 16 3 160 1.07 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 * Drain current limited by maximum junction temperature Units V A A A V mJ mJ W W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient* RθJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ. ---- Max. 0.9 50 110 Units ℃/W ◎ SEMIHOW REV.A0,December 2014 HRD80N06K_HRU80N06K Electrical Characteristics TJ=25 °C unless o...