Document
HRLD1B8N10K_HRLU1B8N10K
HRLD1B8N10K / HRLU1B8N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 11.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 140 Pȍ (Typ.) @VGS=10V Lower RDS(ON) : 185 Pȍ (Typ.) @VGS=4.5V Built-in ESD Diode 100% Avalanche Tested
Jan 2015
BVDSS = 100 V RDS(on) typ = Pȍ
ID = 2.7 A
D-PAK I-PAK
2
1 1
32 3
HRLD1B8N10K HRLU1B8N10K
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 70)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25) - Derate above 25
100 2.7 2.1 10.0 ρ16 22 2.7 2.5 33 0.26
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Thermal Resistance Characteristics
Symbol
Parameter
RșJC RșJA
Junction-to-Case Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 3.8 50 110
Units V A A A V mJ A W W
W/
Units
/W
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HRLD1B8N10K_HRLU1B8N10K
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 2.7 A VGS = 4.5 V, ID = 2 A
1.2 ---
Off Characteristics
BVDSS IDSS IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ VDS = 80 V, VGS = 0 V VDS = 80 V, TJ = 125 VGS = ρ16 V, VDS = 0 V
100 ----
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
VDS = 30 V, VGS = 0 V, f = 1.0 MHz
----
Switching Characteristics
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 50 V, ID = 2.7 A, RG = 25
(Note 4,5)
VDS = 80 V, ID = 2.7 A, VGS = 10 V
(Note 4,5)
--------
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 2.7 A, VGS = 0 V
--
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 2 A, VGS = 0 V diF/dt = 100 A/ȝV
(Note 4)
---
-- 2.8 140 180 185 240
-- --- 1 -- 100 -- ρ10
440 570 36 47 20 26
12 34 16 42 55 120 20 50 11.5 15 1.5 -2.5 --
-- 2.7 -- 10 -- 1.1 43 -73 --
V m m
V Ꮃ Ꮃ Ꮃ
Ꮔ Ꮔ Ꮔ
Ꭸ Ꭸ Ꭸ Ꭸ nC nC nC
A
V Ꭸ nC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, ISD$9DD=25V, RG=25:, Starting TJ =25qC 3. ISD$di/dt$ȝV, VDD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\&\FOH
5. Essentially Independent of Operating Temperature
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HRLD1B8N10K_HRLU1B8N10K
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Gate-Source On Resistance
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
Figure 5. Capacitance Characteristics
V , Gate-Source Voltage [V] GS
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
10 VDS = 50V VDS = 80V
8
6
4
2 * Note : ID = 2.7A
0 0 2 4 6 8 10 12
Q , Total Gate Charge [nC] G
Figure 6. Gate Charge Characteristics
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HRLD1B8N10K_HRLU1B8N10K
Typical Characteristics (continued)
ID, Drain Current [A]
Figure 7. Gate Threshold Voltage vs Temperature
Operation in This Area 101 is Limited by R DS(on)
1 ms
100 10 ms
10-1 10-1
* Notes : 1. T = 25 oC
C
2. T = 150 oC J
3. Single Pulse
100 101
V , Drain-Source Voltage [V] DS
100 ms DC
102
Figure 9. Maximum Safe Operating Area
Figure 8. On-Resistance Variation vs Temperature
Figure 10. Maximum Drain Current vs Case Temperature
ZTJC(t), Thermal Response
D=0.5
100 0.2 0.1
0.05
0.02 10-1 0.01
single pulse
* Notes :
1. ZTJC(t) = 3.8 oC/W Max.
2. Duty Factor, D=t1/t2
3.
T JM
-
T C
=
P DM
*
ZTJC(t)
10-5
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
101
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HRLD1B8N10K_HRLU1B8N10K
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
.ȍ
as DUT
12V 200nF 300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V 10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID RG
L VDD
EAS =
--1-2
LL IAS2.