N-Channel MOSFET
HRLD370N10K_HRLU370N10K
HRLD370N10K / HRLU370N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Supe...
Description
HRLD370N10K_HRLU370N10K
HRLD370N10K / HRLU370N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 53 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 mΩ (Typ.) @VGS=10V Lower RDS(ON) : 33 mΩ (Typ.) @VGS=4.5V 100% Avalanche Tested
December 2014
BVDSS = 100 V
RDS(on) typ = 30 mΩ
ID = 25 A
D-PAK I-PAK
2
1 1
32 3
HRLD370N10K HRLU370N10K 1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25℃)*
Power Dissipation (TC = 25℃) - Derate above 25℃
100 25 * 17.5 * 88 * ±20 80 4.8
3 48 0.32
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +175 300
* Drain current limited by maximum junction temperature
Units V A A A V mJ mJ W W
W/℃ ℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 3.1 50 110
Units ℃/W
◎ SEMIHOW REV.A0,December 2014
HRLD370N10K_HRLU37...
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