HRLU55N03K

HRLD55N03K_HRLU55N03K HRLD55N03K / HRLU55N03K 30V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.2 mΩ (Typ.) @VGS=10V  Lower RDS(ON) : 7.5 mΩ (Typ.) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 30 V RDS(on) typ = 4.2mΩ ID = 100 A D-PAK I-PAK 2 1 1 32 3 HRLD55N03K HRLU55N03K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TA = 25℃)* Power Dissipation (TC = 25℃) - Derate above 25℃ 30 100 * 70 * 310 * ±20 300 7.5 3 75 0.5 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 * Drain current limited by maximum junction temperature Units V A A A V mJ mJ W W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient* RθJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ. ---- Max. 2.0 50 110 Units ℃/W ◎ SEMIHOW REV.A0,December 2014 HRLD55N03K_HRLU55N03K El...