HRLF125N06K

HRLF125N06K HRLF125N06K 60V N-Channel Trench MOSFET FEATURES  BVDSS = 60 V  ID = 70 A  Unrivalled Gate Charge : 50 nC (Typ.)  Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V  Lower RDS(ON) : 12 mΩ (Typ.) @VGS=4.5V  100% Avalanche Tested December 2014 8DFN 5x6 1 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25℃) Power Dissipation (TA = 25℃) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 60 70 * 49 * 245 * ±25 145 7.5 75 2.4 -55 to +175 300 * Drain current limited by maximum junction temperature Units V A A A V mJ mJ W W ℃ ℃ Thermal Resistance Characteristics Symbol Parameter RθJA RθJC Junction-to-Ambient Junction-to-Case Typ. --- Max. 62 2.0 Units ℃/W ◎ SEMIHOW REV.A0,December 2014 HRLF125N06K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance Off Characteristics VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 10 A VDS = 15, ID = 15 A 1.0 ---- BVDSS IDSS IG...