N-Channel MOSFET
HRLP370N10K
HRLP370N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Tech...
Description
HRLP370N10K
HRLP370N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 53 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 mΩ (Typ.) @VGS=10V Lower RDS(ON) : 33 mΩ (Typ.) @VGS=4.5V 100% Avalanche Tested
December 2014
BVDSS = 100 V RDS(on) typ = 30 mΩ ID = 25 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25℃) - Derate above 25℃
100 25 17.5 88 ±20 80 6 60 0.4
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +175 300
Units V A A A V mJ mJ W
W/℃ ℃
℃
Thermal Resistance Characteristics
Symbol RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient
Typ. -0.5 --
Max. 2.5 -62.5
Units ℃/W
◎ SEMIHOW REV.A0,December 2014
HRLP370N10K
Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS Forward Transconductance
...
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