Document
HRLP370N10K
HRLP370N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 53 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 mΩ (Typ.) @VGS=10V Lower RDS(ON) : 33 mΩ (Typ.) @VGS=4.5V 100% Avalanche Tested
December 2014
BVDSS = 100 V RDS(on) typ = 30 mΩ ID = 25 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25℃) - Derate above 25℃
100 25 17.5 88 ±20 80 6 60 0.4
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +175 300
Units V A A A V mJ mJ W
W/℃ ℃
℃
Thermal Resistance Characteristics
Symbol RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient
Typ. -0.5 --
Max. 2.5 -62.5
Units ℃/W
◎ SEMIHOW REV.A0,December 2014
HRLP370N10K
Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS Forward Transconductance
Off Characteristics
VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A VDS = 15, ID = 12 A
1.0 ----
BVDSS IDSS IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS = 0 V, ID = 250 ㎂ VDS = 80 V, VGS = 0 V VDS = 80 V, TJ = 125℃ VGS = ±20 V, VDS = 0 V
100 ----
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
-----
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 50 V, ID = 12 A, RG = 6 Ω
VDS = 80 V, ID = 12 A, VGS = 10 V
--------
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 12 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 12 A, VGS = 0 V diF/dt = 100 A/μs
------
-- 2.4 30 37 33 42 60 --
-- --- 1 -- 100 -- ±100
2500 140 100 1.4
-----
24 -20 -135 -25 -53 -7 -13 --
-- 25 -- 88 -- 1.1 50 -70 --
V mΩ mΩ S
V ㎂ ㎂ ㎁
㎊ ㎊ ㎊ Ω
㎱ ㎱ ㎱ ㎱ nC nC nC
A
V ㎱ nC
Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=11A, VDD=25V, RG=25Ω, Starting TJ =25°C
◎ SEMIHOW REV.A0,December 2014
HRLP370N10K
Typical Characteristics
ID, Drain Current [A]
DS(ON)R [mΩ], Drain-Source On-Resistance
102
VGS Top : 15 V
10 V 8V 7V 6V 5V 4V 3.5 V Bottom : 3 V
101
* Notes : 1. 300us Pulse Test 2. TC = 25oC
100
VDS, Drain-Source Voltage [V]
101
Figure 1. On Region Characteristics
200
160
120
VGS = 4.5V 80
VGS = 10V 40
∗ Note : TJ = 25oC 0
0 20 40 60 80 100
ID, Drain Current [A]
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
3500 3000 2500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd
C C =C rss gd iss
2000
1500 1000 500
0 10-1
* Note ; 1. VGS = 0 V 2. f = 1 MHz
Coss Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
I , Reverse Drain Current [A]
DR
ID, Drain Current [A]
100
10 175oC
1 25oC
* Notes : 1. V = 15V
DS
2. 300us Pulse Test 0.1
0 2 4 6 8 10
V , Gate-Source Voltage [V] GS
Figure 2. Transfer Characteristics
10
1 175oC 25oC
0.1 0.0
* Notes : 1. VGS= 0V 2. 300us Pulse Test
0.4 0.8 1.2 1.6
VSD, Source-Drain Voltage [V]
2.0
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
10
8
6
4
2 V = 80V
DS
ID = 12A 0
0 10 20 30 40 50 60
Q , Total Gate Charge [nC] G
Figure 6. Gate Charge Characteristics
Capacitances [pF]
◎ SEMIHOW REV.A0,December 2014
HRLP370N10K
Typical Characteristics (continued)
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9 0.8
-100
∗ Note : 1. VGS = 0 V 2. ID = 250µA
-50 0 50 100 150
T , Junction Temperature [oC] J
200
Figure 7. Breakdown Voltage Variation vs Temperature
Operation in This Area is Limited by R DS(on) 102
100 µs
1 ms 101 10 ms
DC 100
10-1 10-2
10-1
* Notes : 1. TC = 25 oC 2. TJ = 175 oC 3. Single Pulse
100 101
102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
RDS(ON), (Normalized) Drain-Source On-Resistance
ID, Drain Current [A]
3.0
2.5
2.0
1.5
1.0
0.5
0.0 -100
∗ Note : 1. VGS = 10 V 2. ID = 12 A
-50 0 50 100 150
T , Junction Temperature [oC] J
200
Figu.