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HRLP370N10K Dataheets PDF



Part Number HRLP370N10K
Manufacturers SemiHow
Logo SemiHow
Description N-Channel MOSFET
Datasheet HRLP370N10K DatasheetHRLP370N10K Datasheet (PDF)

HRLP370N10K HRLP370N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 53 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 30 mΩ (Typ.) @VGS=10V  Lower RDS(ON) : 33 mΩ (Typ.) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 30 mΩ ID = 25 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified .

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HRLP370N10K HRLP370N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 53 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 30 mΩ (Typ.) @VGS=10V  Lower RDS(ON) : 33 mΩ (Typ.) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 30 mΩ ID = 25 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25℃) - Derate above 25℃ 100 25 17.5 88 ±20 80 6 60 0.4 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 Units V A A A V mJ mJ W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 2.5 -62.5 Units ℃/W ◎ SEMIHOW REV.A0,December 2014 HRLP370N10K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance Off Characteristics VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A VDS = 15, ID = 12 A 1.0 ---- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 ㎂ VDS = 80 V, VGS = 0 V VDS = 80 V, TJ = 125℃ VGS = ±20 V, VDS = 0 V 100 ---- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics VDS = 25 V, VGS = 0 V, f = 1.0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz ----- td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 50 V, ID = 12 A, RG = 6 Ω VDS = 80 V, ID = 12 A, VGS = 10 V -------- Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current ISM Pulsed Source-Drain Diode Forward Current VSD Source-Drain Diode Forward Voltage IS = 12 A, VGS = 0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge IS = 12 A, VGS = 0 V diF/dt = 100 A/μs ------ -- 2.4 30 37 33 42 60 -- -- --- 1 -- 100 -- ±100 2500 140 100 1.4 ----- 24 -20 -135 -25 -53 -7 -13 -- -- 25 -- 88 -- 1.1 50 -70 -- V mΩ mΩ S V ㎂ ㎂ ㎁ ㎊ ㎊ ㎊ Ω ㎱ ㎱ ㎱ ㎱ nC nC nC A V ㎱ nC Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=11A, VDD=25V, RG=25Ω, Starting TJ =25°C ◎ SEMIHOW REV.A0,December 2014 HRLP370N10K Typical Characteristics ID, Drain Current [A] DS(ON)R [mΩ], Drain-Source On-Resistance 102 VGS Top : 15 V 10 V 8V 7V 6V 5V 4V 3.5 V Bottom : 3 V 101 * Notes : 1. 300us Pulse Test 2. TC = 25oC 100 VDS, Drain-Source Voltage [V] 101 Figure 1. On Region Characteristics 200 160 120 VGS = 4.5V 80 VGS = 10V 40 ∗ Note : TJ = 25oC 0 0 20 40 60 80 100 ID, Drain Current [A] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 3500 3000 2500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd C C =C rss gd iss 2000 1500 1000 500 0 10-1 * Note ; 1. VGS = 0 V 2. f = 1 MHz Coss Crss 100 101 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] I , Reverse Drain Current [A] DR ID, Drain Current [A] 100 10 175oC 1 25oC * Notes : 1. V = 15V DS 2. 300us Pulse Test 0.1 0 2 4 6 8 10 V , Gate-Source Voltage [V] GS Figure 2. Transfer Characteristics 10 1 175oC 25oC 0.1 0.0 * Notes : 1. VGS= 0V 2. 300us Pulse Test 0.4 0.8 1.2 1.6 VSD, Source-Drain Voltage [V] 2.0 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 10 8 6 4 2 V = 80V DS ID = 12A 0 0 10 20 30 40 50 60 Q , Total Gate Charge [nC] G Figure 6. Gate Charge Characteristics Capacitances [pF] ◎ SEMIHOW REV.A0,December 2014 HRLP370N10K Typical Characteristics (continued) BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -100 ∗ Note : 1. VGS = 0 V 2. ID = 250µA -50 0 50 100 150 T , Junction Temperature [oC] J 200 Figure 7. Breakdown Voltage Variation vs Temperature Operation in This Area is Limited by R DS(on) 102 100 µs 1 ms 101 10 ms DC 100 10-1 10-2 10-1 * Notes : 1. TC = 25 oC 2. TJ = 175 oC 3. Single Pulse 100 101 102 VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area RDS(ON), (Normalized) Drain-Source On-Resistance ID, Drain Current [A] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 ∗ Note : 1. VGS = 10 V 2. ID = 12 A -50 0 50 100 150 T , Junction Temperature [oC] J 200 Figu.


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