Document
HRP30N04K
HRP30N04K
40V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 200 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.5 mΩ (Typ.) @VGS=10V 100% Avalanche Tested
December 2014
BVDSS = 40 V RDS(on) typ = 2.5mΩ ID = 230 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25℃) - Derate above 25℃
40 230 160 805 ±20 5750 25 250 1.67
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +175 300
Units V A A A V mJ mJ W
W/℃ ℃
℃
Thermal Resistance Characteristics
Symbol RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient
Typ. -0.5 --
Max. 0.6 -62.5
Units ℃/W
◎ SEMIHOW REV.A0,December 2014
HRP30N04K
Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 30 A
2.0 --
gFS Forward Transconductance
Off Characteristics
VDS = 20, ID = 30 A
--
BVDSS IDSS IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS = 0 V, ID = 250 ㎂ VDS = 32 V, VGS = 0 V VDS = 32 V, TJ = 125℃ VGS = ±20 V, VDS = 0 V
40 ----
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
-----
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 20 V, ID = 30 A, RG = 6 Ω
VDS = 32 V, ID = 30 A, VGS = 10 V
--------
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 25 A, VGS = 0 V diF/dt = 50 A/μs
------
-- 3.6 V
2.5 3.0 mΩ
90 --
S
-- -- V -- 1 ㎂ -- 100 ㎂ -- ±100 ㎁
7800 1800 1300
2
-----
㎊ ㎊ ㎊ Ω
100 -150 -220 -140 -200 -30 -90 --
㎱ ㎱ ㎱ ㎱ nC nC nC
-- 230 A
-- 805
-- 1.3 V
60 -- ㎱
30 -- nC
Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=38A, VDD=35V, RG=25Ω, Starting TJ =25°C
◎ SEMIHOW REV.A0,December 2014
HRP30N04K
Typical Characteristics
DS(ON)R [mΩ], Drain-Source On-Resistance
ID, Drain Current [A]
V GS
Top : 15 V 10 V 8V 7V 6V 5.5 V 5V
Bottom : 4.5 V
* Notes : 1. 300us Pulse Test 2. T = 25oC
C
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
3.2 VGS = 10V
3.0
2.8
2.6
2.4
∗ Note : TJ = 25oC 2.2
0 100 200 300 400 500
ID, Drain Current [A]
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
14000 12000 10000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd C =C
rss gd
Ciss
8000 6000 4000 2000
Coss
* Note ;
Crss 1. VGS = 0 V
2. f = 1 MHz
0 10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
ID, Drain Current [A]
100
10 175oC 25oC
1 * Notes : 1. VDS= 20V 2. 300us Pulse Test
0.1 0 2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
1
0.1 0.0
175oC 25oC
* Notes : 1. VGS= 0V 2. 300us Pulse Test
0.4 0.8 1.2 1.6
VSD, Source-Drain Voltage [V]
2.0
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
10
8
6
4
2 VDS = 32V I = 30A
D
0 0 30 60 90 120 150 180 210
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,December 2014
Capacitances [pF]
HRP30N04K
Typical Characteristics (continued)
BVDSS, (Normalized) Drain-Source Breakdown Voltage
ID, Drain Current [A]
1.2 2.0
RDS(ON), (Normalized) Drain-Source On-Resistance
1.1 1.5
1.0 1.0
0.9 0.8
-100
∗ Note : 1. VGS = 0 V 2. ID = 250µA
-50 0 50 100 150
T , Junction Temperature [oC] J
200
Figure 7. Breakdown Voltage Variation vs Temperature
Operation in This Area
103
is Limited by R DS(on)
100 µs
1 ms 102 10 ms
DC 101
100
10-1 10-2
10-1
* Notes : 1. TC = 25 oC 2. T = 175 oC
J
3. Single Pulse
100 101
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
ID, Drain Current [A]
0.5
0.0 -100
∗ Note : 1. VGS = 10 V 2. I = 30 A
D
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation vs Temperature
240
180.