SEMICONDUCTOR
TECHNICAL DATA
KDR582F
SCHOTTKY BARRIER TYPE DIODE
FOR HIGH SPEED SWITCHING.
FEATURES hLow reverse curre...
SEMICONDUCTOR
TECHNICAL DATA
KDR582F
SCHOTTKY BARRIER TYPE DIODE
FOR HIGH SPEED SWITCHING.
FEATURES hLow reverse current, low capacitance. hSuffix U : Qualified to AEC-Q101.
ex) KDR582F-RTK/HU
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Reverse Voltage Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature
VR
5
V
IO
10
mA
IFSM
130
mA
PD*
100
mW
Tj
150
Storage Temperature Range
Tstg
-55q150
* Mounted on a glass epoxy circuit board of 2020ɘ, Pad Dimension of 44ɘ
CATHODE MARK
C
D
B A
H
DIM MILLIMETERS
A
1.00+_ 0.05
B 0.80+0.10/-0.05
C
0.60+_ 0.05
D
0.30+_ 0.05
E
F
E
0.40 MAX
F
0.13+_ 0.05
G
0.10 MAX
G
H
0.25 MAX
1. ANODE 2. CATHODE
TFSC
Marking
Type Name
M
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Forward Voltage
Reverse Current Total Capacitance
IF=0.1mA
VF
IF=1mA
IF=10mA
VR=3V IR
VR=3V, TA=60
CT
VR=0V, f=1MHz
Series Resistance
rS
IF=5mA, f=10kHz
MIN. 0.2 0.25 0.35 0.4 -
TYP. -
MAX. 0.35 0.45 0.6 0.25 1.25 0.75 15
UNIT V
ǺA pF ʃ
2018. 04. 10
Revision No : 1
1/2
Total Capacitance CT (pF)
KDR582F
CT - VR
1.0 f=1MHz
0.8
0.6
0.4
0.2
0.0
0
2
4
6
8
10
Reverse Voltage VR (V)
VF - IF
100 f=1MHz
10-1
10-2 0
0.1
0.2
0.3
0.4
0.5
Forward Voltage VF (V)
Reverse Current IR (μA)
IR - VR
103
102
101
Ta=25 C
1000
2
4
6
8
10
Reverse Current VR (V)
Forward Current IF (mA)
2018. 04. 10
Revision No : 1
2/2
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