SEMICONDUCTOR
TECHNICAL DATA
LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING.
FEATURES Low Reverse Current : IR=0.1 A...
SEMICONDUCTOR
TECHNICAL DATA
LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING.
FEATURES Low Reverse Current : IR=0.1 A(Typ.) High Reliability. Small Package : ESC.
KDR730E
SCHOTTKY BARRIER TYPE DIODE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Reverse Voltage Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature
VR 30
IO 200
IFSM
1
PD 150*
Tj 125
Storage Temperature Range
Tstg -40 125
* : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V mA A mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
VF
Reverse Current
IR
TEST CONDITION IF=200mA VR=10V
MIN. -
TYP. -
MAX. 0.60 1.0
UNIT V A
2014. 3. 31
Revision No : 1
1/2
KDR730E
2014. 3. 31
Revision No : 1
2/2
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