KDS120V

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Very Small Package : VSM. Low Forward Voltage : VF=0.92V (Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=2.2pF (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage VRM Reverse Voltage VR Maximum (Peak) Forward Current IFM Average Forward Current IO Surge Current (10ms) IFSM Power Dissipation PD Junction Temperature Tj Storage Temperature Range Tstg Note : * Unit Rating. Total Rating=Unit Rating x 1.5 RATING 85 80 300 * 100 * 2* 100 150 -55 150 UNIT V V mA mA A mW A G H KDS120V SILICON EPITAXIAL TYPE DIODE K E B 2 13 PP 1. CATHODE 1 2. CATHODE 2 3. ANODE JD DIM A B C D E G H J K P MILLIMETERS 1.2 +_0.05 0.8 +_0.05 0.5 +_ 0.05 0.3 +_ 0.05 1.2 +_ 0.05 0.8 +_ 0.05 0.40 0.12+_ 0.05 0.2 +_ 0.05 5 3 21 VSM C Marking A3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance VF(1) VF(2) VF(3) IR CT Reverse Recovery Time trr TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA MIN. - TYP. 0.61 0.74 0.92 2.2 1.6 MAX. - 1.20 0.5 4.0 4.0 UNIT V A pF nS 2001. 7. 24 Revision No : 0 1/1 ...