KDS123E

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Ultra- Small Surface Mount Package MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current VRM VR IFM IO 80 80 300* 100* Surge Current (10mS) IFSM 2* Power Dissipation PD 100 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Unit Rating. Total Rating=Unit Rating 0.7 UNIT V V mA mA A mW A G H KDS123E SILICON EPITAXIAL PLANAR DIODE C E B D 2 DIM MILLIMETERS 13 A 1.60+_ 0.20 B 0.85+_ 0.10 C 0.70+_ 0.10 D 0.27+_ 0.10 E 1.60+_ 0.10 F 0.39+_ 0.10 G 1.00+_ 0.10 JH 0.50 J 0.13+_ 0.05 FF 1. CATHODE 2 2. ANODE 1 3. ANODE 2 / CATHODE 1 3 D1 D2 21 ESM Marking US Type Name ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance VF IR CT TEST CONDITION IF=100mA VR=80V VR=6V, f=1MHz MIN. - TYP. - MAX. 1.2 0.1 3.5 UNIT V A pF 2014. 3. 31 Revision No : 1 1/3 KDS123E FORWARD CURRENT IF (mA) REVERSE CURRENT IR (nA) 100 Ta=25 C 10 1 IF - VF D1, D3 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE VF (V) 1 Ta=25 C 0.1 IR - VR 0.01 D1, D3 0.001 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE VR (V) CT - VR 10 f=1MHz Ta=25 C 1 D1, D3 TOTAL CAPACITANCE CT (pF) 0.1 0 5 10 15 20 25 30 35 40 45 REVERSE VOLTAGE VR (V) 2014....