Document
SEMICONDUCTOR
TECHNICAL DATA
KDS123U
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Ultra- Small Surface Mount Package
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current
VRM VR IFM IO
80 80 300* 100*
Surge Current (10mS)
IFSM
2*
Power Dissipation
PD 100
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* Unit Rating. Total Rating=Unit Rating 0.7
UNIT V V mA mA A mW
A J G
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2 B 1.25+_ 0.15
13
C 0.90+_ 0.10 D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65 P H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
C L
L HM
0.70 0.42 +_0.10
NK
N
N 0.10 MIN P 0.1 MAX
1. CATHODE 2 2. ANODE 1 3. ANODE 2/ CATHODE 1
3 D1 D2 21
USM
Marking
Lot No.
Type Name
US
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage Reverse Current Total Capacitance
VF IR CT
TEST CONDITION IF=100mA VR=80V VR=6V, f=1MHz
MIN. -
TYP. -
MAX. 1.2 0.1 3.5
UNIT V A pF
2008. 9. 8
Revision No : 1
1/3
KDS123U
FORWARD CURRENT IF (mA)
REVERSE CURRENT IR (nA)
100 Ta=25 C
10
1
IF - VF
D1, D3
0.1
0.01
0.001 0
0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE VF (V)
1 Ta=25 C
0.1
IR - VR
0.01 D1, D3
0.001 0 10 20 30 40 50 60 70 80
REVERSE VOLTAGE VR (V)
CT - VR
10 f=1MHz Ta=25 C
1 D1, D3
TOTAL CAPACITANCE CT (pF)
0.1 0 5 10 15 20 25 30 35 40 45
REVERSE VOLTAGE VR (V)
2008. 9. 8
Revision No : 1
TOTAL CAPACITANCE CT (pF)
REVERSE CURRENT IR (nA)
FORWARD CURRENT IF (mA)
100 Ta=25 C
10
1
IF - VF
D2, D4
0.1
0.01
0.001 0
0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE VF (V)
1 Ta=25 C
0.1
IR - VR
0.01 D2, D4
0.001 0 10 20 30 40 50 60 70 80
REVERSE VOLTAGE VR (V)
CT - VR
10 f=1MHz Ta=25 C
1 D2, D4
0.1 0 5 10 15 20 25 30 35 40 45
REVERSE VOLTAGE VR (V)
2/3
POWER DISSIPATION P (mW)
KDS123U
P - Ta
120 100
80 60 40 20 0
-40 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
2008. 9. 8
Revision No : 1
3/3
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