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KDS123U Dataheets PDF



Part Number KDS123U
Manufacturers KEC
Logo KEC
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet KDS123U DatasheetKDS123U Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA KDS123U SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Ultra- Small Surface Mount Package MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current VRM VR IFM IO 80 80 300* 100* Surge Current (10mS) IFSM 2* Power Dissipation PD 100 Junction Temperature Tj.

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SEMICONDUCTOR TECHNICAL DATA KDS123U SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Ultra- Small Surface Mount Package MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current VRM VR IFM IO 80 80 300* 100* Surge Current (10mS) IFSM 2* Power Dissipation PD 100 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Unit Rating. Total Rating=Unit Rating 0.7 UNIT V V mA mA A mW A J G E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 C L L HM 0.70 0.42 +_0.10 NK N N 0.10 MIN P 0.1 MAX 1. CATHODE 2 2. ANODE 1 3. ANODE 2/ CATHODE 1 3 D1 D2 21 USM Marking Lot No. Type Name US ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance VF IR CT TEST CONDITION IF=100mA VR=80V VR=6V, f=1MHz MIN. - TYP. - MAX. 1.2 0.1 3.5 UNIT V A pF 2008. 9. 8 Revision No : 1 1/3 KDS123U FORWARD CURRENT IF (mA) REVERSE CURRENT IR (nA) 100 Ta=25 C 10 1 IF - VF D1, D3 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE VF (V) 1 Ta=25 C 0.1 IR - VR 0.01 D1, D3 0.001 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE VR (V) CT - VR 10 f=1MHz Ta=25 C 1 D1, D3 TOTAL CAPACITANCE CT (pF) 0.1 0 5 10 15 20 25 30 35 40 45 REVERSE VOLTAGE VR (V) 2008. 9. 8 Revision No : 1 TOTAL CAPACITANCE CT (pF) REVERSE CURRENT IR (nA) FORWARD CURRENT IF (mA) 100 Ta=25 C 10 1 IF - VF D2, D4 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE VF (V) 1 Ta=25 C 0.1 IR - VR 0.01 D2, D4 0.001 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE VR (V) CT - VR 10 f=1MHz Ta=25 C 1 D2, D4 0.1 0 5 10 15 20 25 30 35 40 45 REVERSE VOLTAGE VR (V) 2/3 POWER DISSIPATION P (mW) KDS123U P - Ta 120 100 80 60 40 20 0 -40 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2008. 9. 8 Revision No : 1 3/3 .


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