SILICON EPITAXIAL PLANAR DIODE
SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
FEATURES High Reliability. Small surface mounting type (SOT-23).
M...
Description
SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
FEATURES High Reliability. Small surface mounting type (SOT-23).
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL RATING
VRM VR
300 250
IFM 300
IO 100
IFSM
2
PD 150
Tj 150
Tstg -55 150
UNIT V V mA mA A mW
KDS135S
SILICON EPITAXIAL PLANAR DIODE
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. NC 2. ANODE 3. CATHODE
3 21
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time
VF IR(1) IR(2) CT trr
TEST CONDITION IF=100mA VR=250V VR=300V VR=0V, f=1MHz IR=30mA, IF=30mA
MIN. -
TYP. 1.0 0.04 1.35 30
MAX. 1.2 0.2 100 3 100
UNIT V
A
pF nS
Marking
J AType Name
Lot No.
2001. 6. 11
Revision No : 0
1/2
KDS135S
2001. 6. 11
Revision No : 0
2/2
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