KDS165T

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage. Fast Reverse Recovery Time. Small Total Capacitance. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage VRM 85 Reverse Voltage VR 80 Maximum (Peak) Forward Current IFM * 300 Average Forward Current IO * 100 Surge Current (10ms) IFSM * 2 Power Dissipation PD ** 900 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * : Unit Rating. (Total Rating=Unit Rating 1.5) ** : Total rating, Package mounted on a ceramic board (600 0.8 ) UNIT V V mA mA A mW CA F K D KDS165T SILICON EPITAXIAL PLANAR DIODE E B 14 23 DIM MILLIMETERS A 2.9+_ 0.2 B 1.6+0.2/-0.1 C 0.70+_ 0.05 D 0.4+_ 0.1 E 2.8+0.2/-0.3 F 1.9+_ 0.2 G 0.16+_ 0.05 H 0.00-0.10 I 0.25+0.3/-0.15 J 0.60 +_ 0.1 K 0.55 +_ 0.1 HG 43 D1 D2 12 TSQ II Marking 4 3 Lot No. Type Name G3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time VF(1) VF(2) VF(3) IR CT trr TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA 12 MIN. - TYP. 0.60 0.72 0.90 0.9 1.6 MAX. - 1.20 0.5 3.0 4.0 UNIT V A pF nS 2005. 6. 21 Revision No : 0 1/2 FORWARD CURRENT I F (mA) KDS165T IF - VF 3 10 2 10 10 C C TaTa=-=2255 Ta=100 C 1 -1 10 -2 10 0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V) 1.2 REVERSE CURRENT IR (µA) I R - VR 10 Ta=100 C 1 Ta=75 C -1 10 Ta=50 C -2 10 Ta=25...