Document
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small Package : SOT-23. Low Forward Voltag : VF=0.92V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=2.2pF(Typ.).
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg
RATING 85 80 300 100 2 150 150
-55 150
UNIT V V mA mA A mW
KDS187
SILICON EPITAXIAL PLANAR DIODE
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. NC 2. CATHODE 3. ANODE
3 21
SOT-23
Marking
D3Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current Total Capacitance Reverse Recovery Time
VF(1) VF(2) VF(3)
IR CT trr
TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA
MIN. -
TYP. 0.61 0.74 0.92
2.2 1.6
MAX. -
1.20 0.5 4.0 4.0
UNIT
V
A pF nS
2011. 12. 23
Revision No : 2
1/2
FORWARD CURRENT I F (mA)
KDS187
IF - VF
10 3
10 2
10
C C
TaT=a-=2255
Ta=100 C
1
-1
10
-2
10 0
0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V)
1.2
REVERSE CURRENT IR (µA)
I R - VR
10
Ta=100 C 1
Ta=75 C
-1
10
Ta=50 C
10-2 Ta=25 C
-3
10 0
20 40 60 80 REVERSE VOLTAGE VR (V)
2.5 2.0 1.5 1.0 0.5
0 0.2
CT - VR
f=1MHz Ta=25 C
1
3 10
30 100 200
REVERSE VOLTAGE VR (V)
REVERSE RECOVERY TIME t rr (ns)
t rr - I F
100 Ta=25 C
50 Fig. 1 30
10
5 3
1
0.5 0.1
0.3 1
3 10 30
FORWARD CURRENT IF (mA)
100
TOTAL CAPACITANCE C T (pF)
Fig. 1. REVERSE RECOVERY TIME(trr ) TEST CIRCUIT
INPUT WAVEFORM
0
INPUT 0.01µF
DUT
-6V 50ns
E
50Ω 2kΩ 50Ω
OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω)
IF =10mA 0
IR
PULSE GENERATOR (ROUT =50Ω)
2011. 12. 23
Revision No : 2
WAVEFORM 0.1 IR
t rr
2/2
.