DatasheetsPDF.com

KDS187 Dataheets PDF



Part Number KDS187
Manufacturers KEC
Logo KEC
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet KDS187 DatasheetKDS187 Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : SOT-23. Low Forward Voltag : VF=0.92V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=2.2pF(Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING.

  KDS187   KDS187


Document
SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : SOT-23. Low Forward Voltag : VF=0.92V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=2.2pF(Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 85 80 300 100 2 150 150 -55 150 UNIT V V mA mA A mW KDS187 SILICON EPITAXIAL PLANAR DIODE E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. NC 2. CATHODE 3. ANODE 3 21 SOT-23 Marking D3Type Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time VF(1) VF(2) VF(3) IR CT trr TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA MIN. - TYP. 0.61 0.74 0.92 2.2 1.6 MAX. - 1.20 0.5 4.0 4.0 UNIT V A pF nS 2011. 12. 23 Revision No : 2 1/2 FORWARD CURRENT I F (mA) KDS187 IF - VF 10 3 10 2 10 C C TaT=a-=2255 Ta=100 C 1 -1 10 -2 10 0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V) 1.2 REVERSE CURRENT IR (µA) I R - VR 10 Ta=100 C 1 Ta=75 C -1 10 Ta=50 C 10-2 Ta=25 C -3 10 0 20 40 60 80 REVERSE VOLTAGE VR (V) 2.5 2.0 1.5 1.0 0.5 0 0.2 CT - VR f=1MHz Ta=25 C 1 3 10 30 100 200 REVERSE VOLTAGE VR (V) REVERSE RECOVERY TIME t rr (ns) t rr - I F 100 Ta=25 C 50 Fig. 1 30 10 5 3 1 0.5 0.1 0.3 1 3 10 30 FORWARD CURRENT IF (mA) 100 TOTAL CAPACITANCE C T (pF) Fig. 1. REVERSE RECOVERY TIME(trr ) TEST CIRCUIT INPUT WAVEFORM 0 INPUT 0.01µF DUT -6V 50ns E 50Ω 2kΩ 50Ω OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) IF =10mA 0 IR PULSE GENERATOR (ROUT =50Ω) 2011. 12. 23 Revision No : 2 WAVEFORM 0.1 IR t rr 2/2 .


KDS184 KDS187 KDS190


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)