PYA28C16

FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time - DATA Polling CMOS & TTL Compatible Inputs and Outputs PYA28C16 2K X 8 EEPROM Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional) Data Retention: 10 Years Available in the following package: – 24-Pin 600 mil Ceramic DIP – 32-Pin Ceramic LCC (450x550 mils) DESCRIPTION The PYA28C16 is a 5 Volt 2Kx8 EEPROM. The PYA28C16 is a 16K memory organized as 2,048 words by 8 bits. Data Retention is 10 Years. The device is available in a 24-Pin 600 mil wide Ceramic DIP and 32-Pin LCC. PIN CONFIGURATIONS FUNCTIONAL BLOCK DIAGRAM DIP (C12) Document # EEPROM108 REV A LCC (L6) Revised July 2012 PYA28C16 - 2K x 8 EEPROM OPERATION READ Read operations are initiated by both OE and CE LOW. The read operation is terminated by either CE or OE returning HIGH. This two line control architecture eliminates bus contention in a system environment. The data bus will be in a high impedance state when either OE or CE is HIGH. BYTE WRITE Write operations are initiated when both CE and WE are LOW and OE is HIGH. The PYA28C16 supports both a CE and WE controlled write cycle. That is, the address is latched by the falling edge of either CE or WE, whichever occurs last. Similarly, the data is latched internally by the rising edge of either CE or WE, whichever occurs fi...