2N6034 2N6035 2N6036 PNP 2N6037 2N6038 2N6039 NPN
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
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2N6034 2N6035 2N6036
PNP 2N6037 2N6038 2N6039
NPN
COMPLEMENTARY SILICON DARLINGTON POWER
TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power
transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJA
Thermal Resistance
ΘJC
2N6034 2N6035 2N6036 2N6037 2N6038 2N6039
40 60 80 40 60 80
5.0 4.0 8.0 100 40 1.5 -65 to +150 83.3 3.12
UNITS V V V A A mA W W °C
°C/W °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEV
VCE=Rated VCEO, VBE=1.5V
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=125°C
ICEO
VCE=Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=100mA (2N6034, 2N6037)
40
BVCEO
IC=100mA (2N6035, 2N6038)
60
BVCEO
IC=100mA (2N6036, 2N6039)
80
VCE(SAT) IC=2.0A, IB=8.0mA
VCE(SAT) IC=4.0A, IB=40mA
VBE(SAT) IC=4.0A, IB=40mA
VBE(ON)
VCE=3.0V, IC=2.0A
hFE VCE=3.0V, IC=500mA
500
hFE VCE=3.0V, IC=2.0A
750
hFE VCE=3.0V, IC=4.0A
100
fT
VC...