Document
DATA SHEET
2N6530 2N6531 2N6532 2N6533
NPN POWER TRANSISTOR
TO-220 CASE
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain.
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL VCBO VCER VCEV VCEO VEBO IC ICM PD
TJ,Tstg
ΘJC
2N6530 80
80
80
80
2N6531 2N6532 100 100 100 100 100 100 100 100 5.0 8.0 15 65
2N6533 120
120
120
120
-65 to +150 1.92
UNITS V V V V V A A W
°C °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N6530
2N6531
2N6532
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX MIN MAX
ICEO
VCE=Rated VCEO
1.0 1.0 1.0
ICEV
VCE=Rated VCEV,
0.5 0.5 0.5
VEB=1.5V
ICEV
VCE=Rated VCEV,
5.0 5.0 5.0
VEB=5.0V, TC=125°C
IEBO
VEB=5.0V
5.0 5.0 5.0
BVCER
IC=200mA, RBE=100Ω
80
100
100
BVCEO
IC=200mA
80 100 100
BVCEV
IC=200mA, VEB=1.5V
80
100
100
VCE(SAT)
IC=3.0A, IB=6.0mA
3.0
VCE(SAT)
IC=5.0A, IB=10mA
2.0
2.0
VCE(SAT)
IC=8.0A, IB=80mA
3.0 3.0 3.0
VBE(ON)
VCE=3.0V, IC=3.0A
2.8
VBE(ON)
VCE=3.0V, IC=5.0A
2.8
2.8
VBE(ON)
VCE=3.0V, IC=8.0A
4.5 4.5 4.5
2N6533 MIN MAX
1.0 0.5
5.0
5.0 120 120 120
2.0
3.0 2.8
4.5
UNITS
mA mA
mA
mA V V V V V V V V V
(CONTINUED ON REVERSE SIDE)
R0
2N6530 SERIES
NPN POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS (Continued)
SYMBOL TEST CONDITIONS
2N6530
2N6531
2N6532
2N6533
MIN MAX MIN MAX MIN MAX MIN MAX
hFE hFE hFE VF hfe |hfe| Cob IS/b ES/b
VCE=3.0V, IC=3.0A
VCE=3.0V, IC=5.0A
1K
VCE=3.0V, IC=8.0A
100
IC=10A
VCE=5.0V, IC=1.0A, f=1.0kHz 1K
VCE=5.0V, IC=1.0A, f=1.0MHz 20
VCB=10V, IE=0, f=1.0MHz
VCE=24V, t=0.5s nonrep.
2.7
VEB=1.5V, IC=4.5A,
120
RBE=100Ω, L=12mH
10K 5K 2.8
200
500 10K
100 5K 2.8
1K 20
200 2.7 120
1K 100
1K 20
2.7 120
10K 5K 2.8
200
1K
100
1K 20
2.7 120
10K 5K 2.8
200
JEDEC TO-220 CASE - MECHANICAL OUTLINE
UNITS
V
pF A mJ
A B
C D
E F
H I
G
123
J
L K
SYMBOL A B C D E
F (DIA) G H I J K L M
DIMENSIONS
INCHES MILLIMETERS
MIN MAX MIN MAX
0.176 0.190 4.48 4.82
0.045 0.055 1.15 1.39
0.014 0.026 0.35 0.65
0.083 0.106 2.10 2.70
0.394 0.417 10.01 10.60
0.140 0.157 3.55 4.00
0.100 0.118 2.54 3.00
0.230 0.270 5.85 6.85
0.560 0.625 14.23 15.87
- 0.250 -
6.35
0.025 0.038 0.64 0.96
0.500 0.579 12.70 14.70
0.090 0.110 2.29 2.79
TO-220 (REV: R1)
M R1
Lead Code:
1) Base 2) Collector 3) Emitter
2N6530 SERIES
100
NPN POWER TRANSISTOR
SAFE OPERATING AREA (TC=25°C)
COLLCECTOR CURRENT - I C (A)
10
5ms 1ms
10µs
IC (MAX) - DC
50µs
1
0.1 1
VCEO (MAX) = 80V (2N6530) VCEO (MAX) = 100V (2N6531, 2N6532) VCEO (MAX) = 120V (2N6533)
10
100
COLLECTOR-EMITTER VOLTAGE - VCE (V)
1000
.