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2N6531 Dataheets PDF



Part Number 2N6531
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description NPN POWER TRANSISTOR
Datasheet 2N6531 Datasheet2N6531 Datasheet (PDF)

DATA SHEET 2N6530 2N6531 2N6532 2N6533 NPN POWER TRANSISTOR TO-220 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain. MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Juncti.

  2N6531   2N6531



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DATA SHEET 2N6530 2N6531 2N6532 2N6533 NPN POWER TRANSISTOR TO-220 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain. MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCER VCEV VCEO VEBO IC ICM PD TJ,Tstg ΘJC 2N6530 80 80 80 80 2N6531 2N6532 100 100 100 100 100 100 100 100 5.0 8.0 15 65 2N6533 120 120 120 120 -65 to +150 1.92 UNITS V V V V V A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N6530 2N6531 2N6532 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX ICEO VCE=Rated VCEO 1.0 1.0 1.0 ICEV VCE=Rated VCEV, 0.5 0.5 0.5 VEB=1.5V ICEV VCE=Rated VCEV, 5.0 5.0 5.0 VEB=5.0V, TC=125°C IEBO VEB=5.0V 5.0 5.0 5.0 BVCER IC=200mA, RBE=100Ω 80 100 100 BVCEO IC=200mA 80 100 100 BVCEV IC=200mA, VEB=1.5V 80 100 100 VCE(SAT) IC=3.0A, IB=6.0mA 3.0 VCE(SAT) IC=5.0A, IB=10mA 2.0 2.0 VCE(SAT) IC=8.0A, IB=80mA 3.0 3.0 3.0 VBE(ON) VCE=3.0V, IC=3.0A 2.8 VBE(ON) VCE=3.0V, IC=5.0A 2.8 2.8 VBE(ON) VCE=3.0V, IC=8.0A 4.5 4.5 4.5 2N6533 MIN MAX 1.0 0.5 5.0 5.0 120 120 120 2.0 3.0 2.8 4.5 UNITS mA mA mA mA V V V V V V V V V (CONTINUED ON REVERSE SIDE) R0 2N6530 SERIES NPN POWER TRANSISTOR ELECTRICAL CHARACTERISTICS (Continued) SYMBOL TEST CONDITIONS 2N6530 2N6531 2N6532 2N6533 MIN MAX MIN MAX MIN MAX MIN MAX hFE hFE hFE VF hfe |hfe| Cob IS/b ES/b VCE=3.0V, IC=3.0A VCE=3.0V, IC=5.0A 1K VCE=3.0V, IC=8.0A 100 IC=10A VCE=5.0V, IC=1.0A, f=1.0kHz 1K VCE=5.0V, IC=1.0A, f=1.0MHz 20 VCB=10V, IE=0, f=1.0MHz VCE=24V, t=0.5s nonrep. 2.7 VEB=1.5V, IC=4.5A, 120 RBE=100Ω, L=12mH 10K 5K 2.8 200 500 10K 100 5K 2.8 1K 20 200 2.7 120 1K 100 1K 20 2.7 120 10K 5K 2.8 200 1K 100 1K 20 2.7 120 10K 5K 2.8 200 JEDEC TO-220 CASE - MECHANICAL OUTLINE UNITS V pF A mJ A B C D E F H I G 123 J L K SYMBOL A B C D E F (DIA) G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.176 0.190 4.48 4.82 0.045 0.055 1.15 1.39 0.014 0.026 0.35 0.65 0.083 0.106 2.10 2.70 0.394 0.417 10.01 10.60 0.140 0.157 3.55 4.00 0.100 0.118 2.54 3.00 0.230 0.270 5.85 6.85 0.560 0.625 14.23 15.87 - 0.250 - 6.35 0.025 0.038 0.64 0.96 0.500 0.579 12.70 14.70 0.090 0.110 2.29 2.79 TO-220 (REV: R1) M R1 Lead Code: 1) Base 2) Collector 3) Emitter 2N6530 SERIES 100 NPN POWER TRANSISTOR SAFE OPERATING AREA (TC=25°C) COLLCECTOR CURRENT - I C (A) 10 5ms 1ms 10µs IC (MAX) - DC 50µs 1 0.1 1 VCEO (MAX) = 80V (2N6530) VCEO (MAX) = 100V (2N6531, 2N6532) VCEO (MAX) = 120V (2N6533) 10 100 COLLECTOR-EMITTER VOLTAGE - VCE (V) 1000 .


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