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MBRS20150CT Dataheets PDF



Part Number MBRS20150CT
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Dual Common Cathode Schottky Rectifier
Datasheet MBRS20150CT DatasheetMBRS20150CT Datasheet (PDF)

MBRS2035CT thru MBRS20150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-263AB (D2PAK) Molding compound, UL flammab.

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MBRS2035CT thru MBRS20150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-263AB (D2PAK) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.37 g (approximately) TO-263AB (D2PAK) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) MBRS MBRS MBRS MBRS MBRS MBRS MBRS PARAMETER SYMBOL 2035 2045 2050 2060 2090 20100 20150 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current VRRM VRMS VDC IF(AV) CT CT CT CT CT CT CT 35 45 50 60 90 100 150 24 31 35 42 63 70 105 35 45 50 60 90 100 150 20 Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 20 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 Peak repetitive reverse surge current (Note 1) Maximum instantaneous forward voltage (Note 2) IF=10A, TJ=25℃ IF=10A, TJ=125℃ IF=20A, TJ=25℃ IF=20A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle IRRM VF IR dV/dt RθJC TJ TSTG 1 0.5 0.65 0.80 0.85 0.57 0.70 0.75 0.84 0.95 0.95 0.72 0.85 0.85 0.1 15 10 5 10000 1.5 - 55 to +150 2 - 55 to +150 0.99 0.87 1.23 1.10 Unit V V V A A A A V mA V/μs OC/W OC OC Document Number: D1307008 Version: J13 MBRS2035CT thru MBRS20150CT Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND MBRS20xxCT (Note 1) QUALIFIED Prefix "H" RN C0 CODE Suffix "G" Note 1: "xx" defines voltage from 35V (MBRS2035CT) to 150V (MBRS20150CT) PACKAGE D2PAK D2PAK PACKING 800 / 13" Paper reel 50 / Tube EXAMPLE PREFERRED P/N MBRS2060CT RN MBRS2060CT RNG MBRS2060CTHRN PART NO. MBRS2060CT MBRS2060CT MBRS2060CT AEC-Q101 QUALIFIED H PACKING CODE RN RN RN GREEN COMPOUND CODE DESCRIPTION G Green compound AEC-Q101 qualified AVERAGE FORWARD A CURRENT (A) RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 25 20 15 10 5 RESISTIVE OR INDUCTIVELOAD 0 50 60 70 80 90 100 110 120 130 140 150 CASE TEMPERATURE (oC) PEAK FORWARD SURGE CURRENT (A) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 150 8.3ms Single Half Sine Wave 125 JEDEC Method 100 75 50 25 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 INSTANTANEOUS FORWARD A CURRENT (A) FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG 100 Pulse Width=300μs 1% Duty Cycle 10 TJ=125℃ TJ=25℃ 1 0.1 0.01 0 MBRS2035CT-2045CT MBRS2050CT-2060CT MBRS2090CT-20150CT 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE (V) INSTANTANEOUS REVERSE A CURRENT (mA) FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 MBRS2035CT-2045CT MBRS2050CT-20150CT 10 TJ=125℃ 1 0.1 TJ=75℃ 0.01 TJ=25℃ 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: D1307008 Version: J13 JUNCTION CAPACITANCE (pF) A TRANSIENT THERMAL IMPEDANCE (℃/W) FIG. 5 TYPICAL JUNCTION CAPACITANCE PER 10000 LEG f=1.0MHz Vsig=50mVp-p 1000 MBRS2035CT-2045CT MBRS2050CT-20150CT 100 0.1 1 10 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS 100 MBRS2035CT thru MBRS20150CT Taiwan Semiconductor FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 100 10 1 0.1 0.01 0.1 1 10 T-PULSE DURATION(s) 100 DIM. A B C D E F G H I J K Unit (mm) Min Max 14.60 10.5 15.88 2.41 2.67 0.68 0.94 2.29 2.79 4.44 4.70 1.14 1.40 1.14 1.40 8.25 9.25 0.36 0.53 2.03 2.79 Unit (inch) Min Max - 0.413 0.575 0.625 0.095 0.105 0.027 0.037 0.090 0.110 0.175 0.185 0.045 0.055 0.045 0.055 0.325 0.364 0.014 0.021 0.080 0.110 SUGGESTED PAD LAYOUT Symbol A B C D E F G Unit (mm) 10.8 8.3 1.1 3.5 16.9 9.5 2.5 Unit (inch) 0.425 0.327 0.043 0.138 0.665 0.374 0.098 MARKING DIAGRAM P/N G YWW F = Specific Device Code = Green Compound = Date Code = Factory Code Document Number: D1307008 Version: J13 CREAT BY ART MBRS2035CT thru MBRS20150CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide .


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