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MBRS25H45CT

Taiwan Semiconductor

Dual Common Cathode Schottky Rectifier

MBRS25H45CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high eff...


Taiwan Semiconductor

MBRS25H45CT

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Description
MBRS25H45CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-263AB (D2PAK) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.4 g (approximately) TO-263AB (D2PAK) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBRS25H45CT Maximum repetitive peak reverse voltage Maximum RMS voltage VRRM VRMS 45 31 Maximum DC blocking voltage VDC 45 Maximum average forward rectified current IF(AV) 25 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 Maximum instantaneous forward voltage (Note 1) IF=12.5A, TJ=25℃ IF=12.5A, TJ=125℃ IF=25A, TJ=25℃ IF=25A, TJ=125℃ Maximum reverse current @ rated VR Voltage rate of change (Rated VR) TJ=25 ℃ TJ=125 ℃ Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: Pulse test with PW=300μs, 1% duty cycle VF IR dV/dt RθJC RθJA TJ TSTG 0.70 0.6...




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