SF16JZ51

SF16GZ51,SF16JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF16GZ51,SF16JZ51 MEDIUM POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 400,600V Repetitive Peak Reverse Voltage : VRRM = 400,600V l Average On−State Current : IT (AV) = 16A l Isolation Voltage : VIsol = 1500V AC MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage SF16GZ51 SF16JZ51 Non−Repetitive Peak Reverse Voltage (Non−Repetitive <5ms, Tj = 0~125°C) SF16GZ51 SF16JZ51 Average On−State Current (Half Sine Waveform) R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) I2t Limit Value Critical Rate of Rise of On−State Curret (Note) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) VDRM VRRM VRSM IT(AV) IT(RMS) ITSM I2t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg VIsol 400 600 500 720 16 25 250 (50Hz) 275 (60Hz) 312 100 5 0.5 10 −5 2 −40~125 −40~125 1500 V V A A A A2s A / µs W W V V A °C °C V Note : di / dt Test Condition, iG = 30mA, tgw = 10µs, tgr ≤ 250ns JEDEC JEITA TOSHIBA Weight: 5.9g ― ― 13−16A1B 1 2001-07-13 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Curre...