CMD06N02N

CMD06N02N /CMU06N02N N-Ch 20V Fast Switching MOSFETs General Description Product Summery The 06N02 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. Features Simple Drive Requirement Low Gate Charge Fast Switching Ultra-Low RDS(on) Green Device Available Absolute Maximum Ratings BVDSS 20V RDSON 6m ID 60A Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA DC/DC converter Motor drives TO252 / TO251 Pin Configuration D G S TO252 G D S TO251 Symbol VDS VGS ID@TC=25 ID@TC=100 IDM EAS IAS PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Sou ce Voltage Continuous Drain Current 1 Continuous Drain Current 1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 20 20 60 50 180 140 50 60 -55 to 175 -55 to 175 Units V V A A A mJ A W Thermal Data Symbol R JA R JC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction -Case1 Typ. ----- Max. 50 2.5 Unit /W /W 1 CMD06N02N /CMU06N02N N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 , unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage BVDSS TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Vol...