STP400N4F6

STI400N4F6, STP400N4F6 Features N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages Datasheet − preliminary data Order codes STI400N4F6 STP400N4F6 VDSS 40 V RDS(on) max ID < 1.7 mΩ 120 A(1) 1. Limited by package ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' 3 !-V Table 1. Device summary Order codes STI400N4F6 STP400N4F6 Marking 400N4F6 Package I²PAK TO-220 Packaging Tube August 2012 Doc ID 023434 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/11 www.st.com 11 Contents Contents STI400N4F6, STP400N4F6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 Doc ID 023434 Rev ...