STL220N6F7

STL220N6F7 Datasheet N-channel 60 V, 1.2 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Order code VDS STL220N6F7 60 V Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness RDS(on ) max. 1.4 mΩ ID 120 A PowerFLAT 5x6 Applications D(5, 6, 7, 8) 8 76 5 Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced G(4) trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) 12 34 Top View AM15540v2 Product status link STL220N6F7 Product summary Order code STL220N6F7 Marking 220N6F7 Package PowerFLAT 5x6 Packing Tape and reel DS10089 - Rev 6 - March 2023 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C ID (1) Drain current (continuous) at TC = 100 °C IDM (2) (1) Drain current (pulsed) ID (3) Drain current (continuous) at Tpcb = 25 °C ID (3) Drain current (continuous) at Tpcb = 100 °C IDM (2) (3) EAS Drain current (pulsed) Single pulse avalanche energy (starting Tj =25 °C, IAS = 20 A) PTOT (1) Total power dissipation at TC = 25 °C PTOT (3) Tj Total po...