Document
STP110N8F7
N-channel 80 V, 6.4 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code STP110N8F7
VDS 80 V
RDS(on)max 7.5 mΩ
ID 80 A
PTOT 170 W
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code STP110N8F7
Table 1: Device summary
Marking
Package
110N8F7
TO-220
Packaging Tube
November 2015
DocID027154 Rev 2
This is information on a product in full production.
1/13
www.st.com
Contents
Contents
STP110N8F7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package mechanical data ............................................................... 9
4.1 TO-220 package mechanical data .................................................. 10
5 Revision history ............................................................................ 12
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STP110N8F7
1 Electrical ratings
Electrical ratings
Symbol
VDS VGS ID ID IDM(2) PTOT EAS(3) TJ Tstg
Table 2: Absolute maximum ratings Parameter
Drain-source voltage Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Single pulse avalanche energy Operating junction temperature Storage temperature
Notes: (1)Limited by package (2)Pulse width is limited by safe operating area (3)Starting Tj = 25°C, Id = 25 A, Vdd = 40 V
Value 80 ±20
80 (1) 76 320 170 220
-55 to 175
Unit V V A A A W mJ °C °C
Symbol Rthj-case Rthj-amb
Table 3: Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max
Value 0.88 62.5
Unit °C/W °C/W
DocID027154 Rev 2
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Electrical characteristics
STP110N8F7
2 Electrical characteristics
(TC = 25 °C unless otherwise specified) Table 4: On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage
VGS = 0, ID = 250 µA
Zero gate voltage IDSS drain current
VGS = 0, VDS = 80 V
VGS = 0, VDS = 80 V, TC = 125 °C
Gate-body leakage
IGSS current
VDS = 0, VGS = ± 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on- resistance
VGS = 10 V, ID = 40 A
Min. 80
Typ. Max. Unit V
1 µA 10 µA
±100 nA
2.5 4.5 V 6.4 7.5 mΩ
Symbol Ciss Coss
Crss
Qg Qgs
Parameter
Input capacitance Output capacitance
Reverse transfer capacitance Total gate charge Gate-source charge
Qgd Gate-drain charge
Table 5: Dynamic Test conditions
VGS = 0, VDS = 40 V, f = 1 MHz
VDD = 40 V, ID = 80 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior" )
Min. -
-
-
-
Typ. 3435 653
57
46.8 23.4
11.2
Max. -
Unit pF pF
- pF
- nC - nC
- nC
Symbol td(on) tr td(off)
Parameter Turn-on delay time Rise time Turn-off delay time
tf Fall time
Table 6: Switching times
Test conditions
VDD = 40 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform" )
Min. -
-
Typ. 49 95 60
32
Max. -
Unit ns ns ns
- ns
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STP110N8F7
Symbol VSD(1) trr Qrr
IRRM
Parameter
Table 7: Source drain diode Test conditions
Forward on voltage Reverse recovery time Reverse recovery charge
Reverse recovery current
VGS = 0, ISD = 80 A
ISD = 80 A, di/dt = 100 A/µs VDD = 60 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times")
Electrical characteristics
Min. -
Typ.
48.6 58.6
Max. 1.2
Unit V ns nC
- 2.4
A
Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
2.2 Electrical characteristics (curves)
Figure 2: Safe operating area
STP110N8F7 Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
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STP110N8F7
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Source-drain diode forward characteristics
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Test circuits
3 Test circuits
Figure 13: Test circuit for resistive load.