STPSC16H065C
650 V power Schottky silicon carbide diode
$ .
$
$ $ . 72$%
Features
No or negligible reverse r...
STPSC16H065C
650 V power
Schottky silicon carbide diode
$ .
$
$ $ . 72$%
Features
No or negligible reverse recovery Switching behavior independent of
temperature High forward surge capability ECOPACK®2 compliant component
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a
Schottky diode structure with a 650 V rating. Due to the
Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature.
Especially suited for use in interleaved or bridgeless topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Table 1. Device summary
Symbol
Value
IF(AV) VRRM Tj (max)
2x8A 650 V 175 °C
December 2015
This is information on a product in full production.
DocID024810 Rev 5
1/8
www.st.com
Characteristics
1 Characteristics
STPSC16H065C
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM IF(RMS) IF(AV)
IFSM
IFRM
Repetitive peak reverse voltage Forward rms current Average forward current
Surge non repetitive forward current
Repetitive peak forward current
Tc = 140 °C(1), DC Tc = 135 °C(2), DC
Per diod...