STS10P3LLH6

STS10P3LLH6 Datasheet P-channel -30 V, 10 mΩ typ., -12.5 A, STripFET H6 Power MOSFET in an SO-8 package 5 8 4 1 SO-8 D(5, 6, 7, 8) G(4) S(1, 2, 3) AM01475v4 Features Order code VDS STS10P3LLH6 -30 V Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss RDS(on) max. 12 mΩ ID -12.5 A Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS10P3LLH6 Product summary Order code STS10P3LLH6 Marking 10K3L Package SO-8 Packing Tape and reel DS10150 - Rev 7 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at Tamb = 25 °C ID Drain current (continuous) at Tamb = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at Tamb = 25 °C EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = -5 A) Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Rthj-amb (1) Thermal resistance junction-amb 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 s. STS10P3LLH6 Electrical rat...