P-Channel Power MOSFET
STS7P4LLF6
Datasheet
P-channel 40 V, 17.5 mΩ typ., 7 A, STripFET F6 Power MOSFET in an SO-8 package
5 8
4 1 SO-8
D(5, 6...
Description
STS7P4LLF6
Datasheet
P-channel 40 V, 17.5 mΩ typ., 7 A, STripFET F6 Power MOSFET in an SO-8 package
5 8
4 1 SO-8
D(5, 6, 7, 8)
G(4)
S(1, 2, 3)
AM01475v4
Features
Order code
VDS
STS7P4LLF6
40 V
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
RDS(on) max.
ID
20.5 mΩ
7A
Applications
Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Product status link STS7P4LLF6
Product summary
Order code
STS7P4LLF6
Marking
7K4L
Package
SO-8
Packing
Tape and reel
Note: For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed.
DS10067 - Rev 3 - February 2021 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Note:
STS7P4LLF6
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at Tamb = 25 °C ID
Drain current (continuous) at Tamb = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at Tamb = 25 °C
Tstg
Storage temperature range
TJ
Maximum junction temperature
1. Pulse width limited by safe operating area.
Value 40 ±20 7 4.2 28 2.7
-55 to 150 150
Table 2. Thermal data
Symbol
Parameter
RthJA (1) Thermal resistance, junct...
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