STS9P2UH7

STS9P2UH7 P-channel 20 V, 0.0195 Ω typ., 9 A STripFET™ H7 Power MOSFET in a SO-8 package Datasheet - production data 5 8 1 SO-8 4 Figure 1: Internal schematic diagram Features Order code STS9P2UH7 VDS 20 V RDS(on) max 0.0225 Ω @ 4.5 V ID 9A  Very low on-resistance  Very low capacitance and gate charge  High avalanche ruggedness  Ultra logic level Applications  Switching applications Description This device exhibits low on-state resistance and capacitance for improved conduction and switching performance. Order code STS9P2UH7 Table 1: Device summary Marking Package 9L2U SO-8 Packaging Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. January 2015 DocID025143 Rev 3 This is information on a product in full production. 1/15 www.st.com Contents Contents STS9P2UH7 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 SO-8 package mechanical data ........................................................ 9 5 Packaging mechanical data........................