Document
STTH30AC06C
Turbo 2 ultrafast high voltage rectifier
$ .
$
723/ $ . $
$ . $
723)
Datasheet − production data
Description
The STTH30AC06C uses ST Turbo 2 600 V technology. It is suited as boost diode specially for use in air conditioning equipment as continuous mode interleaved power factor correction.
Table 1. Device summary
Symbol
Value
IF(AV) VRRM trr (typ) VF (typ)
Tj
2 x 15A 600 V 40 ns 1.15 V 175 °C
$ . $ 72//
Features
• Ultrafast switching • Low reverse current • Low thermal resistance • Reduces switching and conduction losses • Insulated package TO-3PF:
– Insulated voltage: 2500 VDC
July 2015
This is information on a product in full production.
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Characteristics
1 Characteristics
STTH30AC06C
Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM IF(RMS)
Repetitive peak reverse voltage Forward rms current
IF(AV) Average forward current
Per diode Per device
600 30 15 30
V A
A
IFSM Tstg Tj
Surge non repetitive forward current Storage temperature range Maximum operating junction temperature
tp = 10 ms sinusoidal
140 -65 to +175
175
A °C °C
Symbol
Table 3. Thermal parameters Parameter
Rth(j-c) Junction to case (TO3P-3L, TO247 LL) Rth(c) Coupling (TO3P-3L, TO247 LL) Rth(j-c) Junction to case (TO-3PF) Rth(c) Coupling (TO-3PF)
Per diode Total
Per diode Total
Value 1.5 0.85 0.2 3.5 2.7 1.9
Unit °C/W
Symbol
Table 4. Static electrical characteristics (per diode)
Parameter
Test conditions
Min. Typ.
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2%
Tj = 25 °C VR = VRRM
Tj = 150 °C
-
40
Tj = 25 °C IF = 15 A
Tj = 150 °C
- 1.15
Tj = 25 °C IF = 30 A
Tj = 150 °C
- 1.42
Max. 10 400 1.95 1.45 2.25 1.8
Unit µA
V
To evaluate the conduction losses use the following equation: P = 1.1 x IF(AV) + 0.023 IF2(RMS)
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STTH30AC06C
Characteristics
Symbol
Table 5. Dynamic characteristics (per diode)
Parameter
Test conditions
IF = 0.5 A, Irr = 0.25 A, IR= 1 A trr Reverse recovery time Tj = 25 °C
IF = 1 A, VR = 30 V, dIF/dt = 50 A/µs
IRM
Reverse recovery current
Tj = 125 °C
IF = 15 A, VR = 400 V, dIF/dt = 100 A/µs
tfr VFP
Forward recovery time Tj = 25 °C
Forward recovery voltage
IF = 15 A, VFR = 1.9 V, dIF/dt = +100 A/µs
Min. Typ. Max. Unit
- 30 ns
- 40 55
- 4 5.5 A
- 100 ns
- 2.5
V
Figure 1. Average forward power dissipation Figure 2. Forward voltage drop versus forward
versus average forward current (per diode)
current (typical values, per diode)
30 PF(AV) (W) d = 0.05 d = 0.1
25
d = 0.2 d = 0.5 d = 1
20
15
10
T
5
IF(AV)(A)
d=tp/T
tp
0 0 2 4 6 8 10 12 14 16 18 20
100.0 I F ( A )
10.0
T j = 150°C
1.0
T j = 25 °C
0.1 VF(V) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
Figure 3. Forward voltage drop versus forward current (maximum values, per diode)
Figure 4. Relative variation of thermal impedance, junction to case, versus pulse
duration (TO3P-3L, TO247 LL)
100.0 I F ( A )
10.0
T j = 150°C
1.0
T j = 25 °C
0.1 VF(V) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Z th ( j-c) /R th ( j-c)
1.0 0.9 TO3P-3L / TO-247 LL
0.8
0.7
0.6
0.5 Single pulse 0.4
0.3
0.2
0.1
0.0
1.E-04
1.E-03
1.E-02
tP(s)
1.E-01
1.E+00
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Characteristics
STTH30AC06C
Figure 5. Relative variation of thermal impedance, junction to case, versus pulse
duration (TO-3PF)
Figure 6. Peak reverse recovery current versus dIF/dt (typical values, per diode)
Zth ( j-c) /Rth ( j-c)
1.0 0.9 TO- 3PF 0.8 0.7 0.6 0.5 Single pulse 0.4 0.3 0.2 0.1 0.0
1.E-03 1.E-02 1.E-01
1.E+00
tP(s) 1.E+01 1.E+02
16 IRM(A)
IF VR Tj
= = =
15 A
400 V 125°C
12
8
4
0 dlF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500
Figure 7. Reverse recovery time versus dIF/dt (typical values, per diode)
tRR(ns)
400
350
300
IF = 15 A
VR Tj
= =
400 V 125°C
250
200
150
100
50
0 0
dlF/dt(A/µs) 50 100 150 200 250 300 350 400 450 500
Figure 8. Reverse recovery charges versus dIF/dt (typical values, per diode)
800 Q RR(nC)
700 600
IF VR
= =
15 A 400 V
T j = 125°C
500
400
300
200
100 0 dlF/dt(A/µs)
0 50 100 150 200 250 300 350 400 450 500
Figure 9. Reverse recovery softness factor versus dIF/dt (typical values, per diode)
2.0 SFACTOR
IF VR
= =
15 A 400 V
T j = 125°C
1.5
1.0
0.5
0.0 dlF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500
Figure 10. Relative variations of dynamic parameters versus junction temperature
1.4
1.2
1.0
SFACTOR
0.8
0.6 IRM
0.4
Q RR
0.2
0.0 25
50
IF VR
= =
15 A 400 V
Reference: T j = 125°C
Tj (°C) 75 100 125
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STTH30AC06C
Characteristics
Figure 11. Transient peak forward voltage versus dIF/dt (typical values, per diode)
8 VFP(V)
IF = 15 A T j = 125°C
6
4
2
0 dlF/dt(A/µs) 100 150 200 250 300 350 400 450 500
Figure 12. Forward recovery time versus dIF/dt (typical values, per diode)
tF R(ns)
120 100
80.