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STTH30R02DJF

STMicroelectronics

Ultrafast recovery diode high efficiency

Product status STTH30R02DJF Product summary IF(AV) 30 A VRRM 200 V Tj(max.) 175 °C VF(typ.) 0.8 V trr(typ.) 2...



STTH30R02DJF

STMicroelectronics


Octopart Stock #: O-979139

Findchips Stock #: 979139-F

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Product status STTH30R02DJF Product summary IF(AV) 30 A VRRM 200 V Tj(max.) 175 °C VF(typ.) 0.8 V trr(typ.) 27 ns STTH30R02DJF Datasheet 200 V, 30 A ultrafast recovery diode high efficiency Features Suited for DC/DC converts Low losses High Tj High surge current capability High energy avalanche capability Thin package: 1 mm ECOPACK2 compliant Applications Switching diode SMPS DC/DC converter Telecom power Description High performance diode suited for high frequency DC to DC converters. Packaged in PowerFLAT 5x6, the STTH30R02DJF is optimized for use in low voltage high frequency inverters. DS8872 - Rev 2 - February 2023 For further information contact your local STMicroelectronics sales office. www.st.com STTH30R02DJF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short circuited) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current TC = 105 °C, δ = 0.5, square wave IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj Maximum operating junction temperature Value Unit 200 V 45 A 30 A 300 A -65 to +175 °C 175 °C Symbol Rth(j-c) Table 2. Thermal parameters Parameter Junction to case Max. value 2.0 Unit °C/W For more information, please refer to the following application note: AN5046: Printed circuit board ass...




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