Ultrafast recovery diode high efficiency
Product status STTH30R02DJF
Product summary
IF(AV)
30 A
VRRM
200 V
Tj(max.)
175 °C
VF(typ.)
0.8 V
trr(typ.)
2...
Description
Product status STTH30R02DJF
Product summary
IF(AV)
30 A
VRRM
200 V
Tj(max.)
175 °C
VF(typ.)
0.8 V
trr(typ.)
27 ns
STTH30R02DJF
Datasheet
200 V, 30 A ultrafast recovery diode high efficiency
Features
Suited for DC/DC converts
Low losses
High Tj
High surge current capability
High energy avalanche capability
Thin package: 1 mm
ECOPACK2 compliant
Applications
Switching diode SMPS DC/DC converter Telecom power
Description
High performance diode suited for high frequency DC to DC converters.
Packaged in PowerFLAT 5x6, the STTH30R02DJF is optimized for use in low voltage high frequency inverters.
DS8872 - Rev 2 - February 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STTH30R02DJF
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short circuited)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current
TC = 105 °C, δ = 0.5, square wave
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
Tstg Storage temperature range
Tj
Maximum operating junction temperature
Value
Unit
200
V
45
A
30
A
300
A
-65 to +175 °C
175
°C
Symbol Rth(j-c)
Table 2. Thermal parameters Parameter Junction to case
Max. value 2.0
Unit °C/W
For more information, please refer to the following application note:
AN5046: Printed circuit board ass...
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