CMUT5551E
ENHANCED SPECIFICATION SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:...
CMUT5551E
ENHANCED SPECIFICATION SURFACE MOUNT
NPN SILICON
TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5551E is an
NPN Silicon
Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging.
MARKING CODE: 5C1
FEATURES:
SOT-523 CASE
High Collector Breakdown Voltage 250V Low Leakage Current 50nA Max
APPLICATIONS:
Low Saturation Voltage 100mV Max @ 50mA
General purpose switching and amplification Complementary Device CMUT5401E
Telephone applications
SOT-523 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
♦Collector-Base Voltage ♦Collector-Emitter Voltage
Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC PD TJ, Tstg ΘJA
250 220 6.0 600 250 -65 to +150 500
UNITS V V V mA
mW °C °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO ICBO IEBO
♦BVCBO ♦BVCEO
BVEBO
♦VCE(SAT) ♦VCE(SAT)
VBE(SAT) VBE(SAT)
VCB=120V VCB=120V, TA=100°C VEB=4.0V IC=100µA IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA
250 220 6.0
♦ Enhanced Specification
MAX 50 50 50
75 100 1.00 1.00
UNITS nA μA nA V V V mV mV V V
R1 (9-February 2010)
CMUT5551E
ENHANCED SPECIFICATION SURFACE MOUNT
NPN SILICON
TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: ...