CXT5551HC SURFACE MOUNT
HIGH CURRENT NPN SILICON TRANSISTOR
SOT-89 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTIO...
CXT5551HC SURFACE MOUNT
HIGH CURRENT
NPN SILICON
TRANSISTOR
SOT-89 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551HC type is an high current
NPN silicon
transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC PD TJ, Tstg ΘJA
180 160 6.0 1.0 1.2 -65 to +150 104
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE fT Cob
VCB=120V VCB=120V, TA=100°C VEB=4.0V IC=100µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=1.0A VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz
180 160 6.0
80 80 30 100
10
MAX 50 50 50
0.15 0.20 1.00 1.00 250
15
UNITS V V V A W °C
°C/W
UNITS nA µA nA V V V V V V V
MHz pF
R1 (23-February 2010)
CXT5551HC SURFACE MOUNT
HIGH CURRENT
NPN SILICON
TRANSISTOR
SOT-89 CASE - MECHANICAL OUTLINE
(Bottom View)
LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R1 (23-F...