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CXT5551HC

Central Semiconductor

SURFACE MOUNT NPN SILICON TRANSISTOR

CXT5551HC SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR SOT-89 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTIO...


Central Semiconductor

CXT5551HC

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Description
CXT5551HC SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR SOT-89 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551HC type is an high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 180 160 6.0 1.0 1.2 -65 to +150 104 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE fT Cob VCB=120V VCB=120V, TA=100°C VEB=4.0V IC=100µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=1.0A VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 180 160 6.0 80 80 30 100 10 MAX 50 50 50 0.15 0.20 1.00 1.00 250 15 UNITS V V V A W °C °C/W UNITS nA µA nA V V V V V V V MHz pF R1 (23-February 2010) CXT5551HC SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER w w w. c e n t r a l s e m i . c o m R1 (23-F...




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