Document
CZT2680 SURFACE MOUNT
HIGH VOLTAGE NPN SILICON
SWITCHING POWER TRANSISTOR
SOT-223 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2680 NPN High Voltage Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a SOT-223 Surface Mount Package. Typical applications include drivers and general high voltage switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC ICM PD TJ, Tstg ΘJA
250 200 6.0 1.5 2.0 2.0 -65 to +150 62.5
UNITS V V V A A W °C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob ton toff
VCB=200V
IC=100µA
250
IC=20mA
200
IE=100µA
6.0
IC=100mA, IB=10mA
IC=500mA, IB=50mA
IC=1.0A, IB=150mA
IC=500mA, IB=50mA
IC=1.0A, IB=150mA
VCE=5.0V, IC=20mA
40
VCE=5.0V, IC=500mA
40
VCE=5.0V, IC=1.0A
15
VCE=20V, IC=100mA, f=1.0MHz
50
VCB=10V, IE=0, f=1.0MHz
IC=500mA, VCC=20V, IB1= IB2=50mA
IC=500mA, VCC=20V, IB1= IB2=50mA
435 275 9.0 45 95 135 0.83 0.95 105 90 47 80
0.3 1.0
MAX 100
150 200 500 1.10 1.20
UNITS nA V V V mV mV mV V V
MHz 30 pF
µs µs
R3 (1-March 2010)
CZT2680
SURFACE MOUNT HIGH VOLTAGE NPN SILICON
SWITCHING POWER TRANSISTOR
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R3 (1-March 2010)
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