Power MOSFET
PD - 95243
IRF7530PbF
l Trench Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l...
Description
PD - 95243
IRF7530PbF
l Trench Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) lAvailable in Tape & Reel l Lead-Free
S1 G1 S2 G2
Description
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8™ package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
HEXFET® Power MOSFET
18 27 36 45
Top View
D1
D1 VDSS = 20V
D2
D2 RDS(on) = 0.030Ω
Micro8™
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation
Power Dissipation
Linear Derating Factor
EAS VGS TJ, TSTG
Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range
Max. 20 5.4 4.3 40 1.3 0.80 10 33 ± 12
-55 to + 150
Units V
A
W mW/°C
mJ V °C
Thermal Res...
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