Document
PD - 95245
IRF7606PbF
l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free Description
S S S G
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET
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8
A D
2 7D
3 6D
4 5D
Top View
VDSS = -30V RDS(on) = 0.09Ω
The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
Max.
Units
VDS ID @ TA = 25°C ID @ TA = 70°C IDM
PD @TA = 25°C PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor
-30 V -3.6 -2.9 A -29 1.8 W 1.1 W 14 mW/°C
VGS VGSM dv/dt
Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µS Peak Diode Recovery dv/dt
± 20 30
-5.0
V V V/ns
TJ , TSTG
Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
-55 to + 150 240 (1.6mm from case)
°C
Thermal Resistance
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
70 °C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later .
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1
5/13/04
IRF7606PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.075 0.09 0.130 0.15
Ω
VGS = - 10V, ID = -2.4A VGS = -4.5V, ID = -1.2A
VGS(th)
Gate Threshold Voltage
-1.0 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance
2.3 ––– ––– S VDS = -10V, ID = -1.2A
IDSS
Drain-to-Source Leakage Current
––– ––– -1.0 ––– ––– -25
µA
VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
––– ––– -100 ––– ––– 100
nA
VGS = -20V VGS = 20V
Qg Total Gate Charge
––– 20 30
ID = -2.4A
Qgs Gate-to-Source Charge
––– 2.1 3.1 nC VDS = -24V
Qgd Gate-to-Drain ("Miller") Charge
––– 7.6 11
VGS = -10V, See Fig. 9
td(on)
Turn-On Delay Time
––– 13 –––
VDD = -10V
tr td(off)
Rise Time Turn-Off Delay Time
––– 20 ––– ––– 43 –––
ns
ID = -2.4A RG = 6.0Ω
tf Fall Time
––– 39 –––
RD = 4.0Ω
Ciss Input Capacitance
––– 520 –––
VGS = 0V
Coss Crss
Output Capacitance Reverse Transfer Capacitance
––– 300 ––– pF VDS = -25V
––– 140 –––
ƒ = 1.0MHz, See Fig. 8
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge
Min.
––– ––– –––
Typ. Max.
-1.8
-29 ––– -1.2 43 64 50 76
Units
A
V ns nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = -2.4A, VGS = 0V TJ = 25°C, IF = -2.4A di/dt = -100A/µs
D S
Notes: Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
ISD ≤ -2.4A, di/dt ≤ -130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
2
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
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-ID , Drain-to-Source Current (A)
100 VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V
10
IRF7606PbF
100 VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V
10
-ID , Drain-to-Source Current (A)
20µs PULSE WIDTH
1
-3.0V TJ = 25°C
A
0.1 1 10
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
-3.0V
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
-ID , Drain-to-Source Current (A)
100 100
-ISD , Reverse Drain Current (A)
TJ = 25°C 10 TJ = 150°C
VDS = -10V
1 3.0
3.5
4.0
20µs PULSE WIDTH 4.5 5.0 5.5 6.0A
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
TJ = 150°C
TJ = 25°C
1
0.1 0.4
VGS = 0V A
0.6 0.8 1.0 1.2 1.4 1.6
-VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode Forward Voltage
3
R D.