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IRF7606PBF Dataheets PDF



Part Number IRF7606PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7606PBF DatasheetIRF7606PBF Datasheet (PDF)

PD - 95245 IRF7606PbF l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free Description S S S G Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, .

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PD - 95245 IRF7606PbF l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free Description S S S G Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. HEXFET® Power MOSFET 1 8 A D 2 7D 3 6D 4 5D Top View VDSS = -30V RDS(on) = 0.09Ω The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro8 Absolute Maximum Ratings Parameter Max. Units VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation„ Maximum Power Dissipation „ Linear Derating Factor -30 V -3.6 -2.9 A -29 1.8 W 1.1 W 14 mW/°C VGS VGSM dv/dt Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µS Peak Diode Recovery dv/dt ‚ ± 20 30 -5.0 V V V/ns TJ , TSTG Junction and Storage Temperature Range Soldering Temperature, for 10 seconds -55 to + 150 240 (1.6mm from case) °C Thermal Resistance Parameter Max. Units RθJA Maximum Junction-to-Ambient „ 70 °C/W All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . www.irf.com 1 5/13/04 IRF7606PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.075 0.09 ––– 0.130 0.15 Ω VGS = - 10V, ID = -2.4A ƒ VGS = -4.5V, ID = -1.2A ƒ VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance 2.3 ––– ––– S VDS = -10V, ID = -1.2A IDSS Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -25 µA VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– -100 ––– ––– 100 nA VGS = -20V VGS = 20V Qg Total Gate Charge ––– 20 30 ID = -2.4A Qgs Gate-to-Source Charge ––– 2.1 3.1 nC VDS = -24V Qgd Gate-to-Drain ("Miller") Charge ––– 7.6 11 VGS = -10V, See Fig. 9 ƒ td(on) Turn-On Delay Time ––– 13 ––– VDD = -10V tr td(off) Rise Time Turn-Off Delay Time ––– 20 ––– ––– 43 ––– ns ID = -2.4A RG = 6.0Ω tf Fall Time ––– 39 ––– RD = 4.0Ω ƒ Ciss Input Capacitance ––– 520 ––– VGS = 0V Coss Crss Output Capacitance Reverse Transfer Capacitance ––– 300 ––– pF VDS = -25V ––– 140 ––– ƒ = 1.0MHz, See Fig. 8 Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min. ––– ––– ––– ––– ––– Typ. Max. ––– -1.8 ––– -29 ––– -1.2 43 64 50 76 Units A V ns nC Conditions MOSFET symbol showing the integral reverse G p-n junction diode. TJ = 25°C, IS = -2.4A, VGS = 0V ƒ TJ = 25°C, IF = -2.4A di/dt = -100A/µs ƒ D S Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 ) ‚ ISD ≤ -2.4A, di/dt ≤ -130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C 2 ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ Surface mounted on FR-4 board, t ≤ 10sec. www.irf.com -ID , Drain-to-Source Current (A) 100 VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 10 IRF7606PbF 100 VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 10 -ID , Drain-to-Source Current (A) 20µs PULSE WIDTH 1 -3.0V TJ = 25°C A 0.1 1 10 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics -3.0V 20µs PULSE WIDTH 1 TJ = 150°C A 0.1 1 10 -VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics -ID , Drain-to-Source Current (A) 100 100 -ISD , Reverse Drain Current (A) TJ = 25°C 10 TJ = 150°C VDS = -10V 1 3.0 3.5 4.0 20µs PULSE WIDTH 4.5 5.0 5.5 6.0A -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 TJ = 150°C TJ = 25°C 1 0.1 0.4 VGS = 0V A 0.6 0.8 1.0 1.2 1.4 1.6 -VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 R D.


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