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IRF7805ZPBF-1

International Rectifier

Power MOSFET

VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 30 V 6.8 mΩ 18 nC 16 A IRF7805ZPbF-1 HEXFET® Power MOSFET ...


International Rectifier

IRF7805ZPBF-1

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Description
VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 30 V 6.8 mΩ 18 nC 16 A IRF7805ZPbF-1 HEXFET® Power MOSFET S1 AA 8D S2 7D S3 6D G4 5D Top View SO-8 Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF7805ZPbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7805ZPbF-1 IRF7805ZTRPbF-1 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current fPower Dissipation fPower Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Max. 30 ± 20 16 12 120 2.5 1.6 0.02 -55 to + 150 Units V A W W/°C °C Thermal Resistance Parameter gRθJL Junction-to-Drain Lead fgRθJA Junction-to-Ambient Notes  through … are on page 10 1 www.irf.com © 2013 International Rectifier Typ. ––– ––– Submit Datasheet Feedback Max. 20 50 Units °C/W November 20, 2013 IRF7805ZPbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter ...




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