IRF7811AVPBF-1

VDS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 30 V 14 mΩ 17 nC 10.8 A IRF7811AVPbF-1 HEXFET® Power MOSFET SO-8 S1 S2 S3 G4 AA 8D 7D 6D 5D Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF7811AVPbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7811AVPbF-1 IRF7811AVTRPbF-1 Absolute Maximum Ratings Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Output Current (VGS ≥ 4.5V) ™Pulsed Drain Current TA = 25°C TL = 90°C Power Dissipation eÃÃÃÃÃÃÃÃÃÃTA = 25°C TL = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) ™Pulsed Source Current Thermal Resistance Parameter ehMaximum Junction-to-Ambient hÃMaximum Junction-to-Lead Symbol VDS VGS ID IDM PD TJ , TSTG IS ISM Symbol RθJA RθJL IRF7811AV 30 ±20 10.8 11.8 100 2.5 3.0 -55 to 150 2.5 50 Units V A W °C A Typ Max Units ––– 50 ––– 20 °C/W 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 20, 2013 IRF7811AVPbF-1 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Total Gate Ch...