IRF7832PBF-1

VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 30 V 4.0 mΩ 34 nC 20 A IRF7832PbF-1 HEXFET® Power MOSFET S1 AA 8D S2 7D S3 6D G4 5D Top View SO-8 Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF7832PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7832PbF-1 IRF7832TRPbF-1 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter fRθJL Junction-to-Drain Lead RθJA Junction-to-Ambient Notes  through „ are on page 10 Max. 30 ± 20 20 16 160 2.5 1.6 0.02 -55 to + 155 Units V A W W/°C °C Typ. ––– ––– Max. 20 50 Units °C/W 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 22, 2013 IRF7832PbF-1 Static @ TJ = 25°C (unless otherwise specified)...