Power MOSFET
PD - 95336A
IRF7910PbF
Applications
l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Net...
Description
PD - 95336A
IRF7910PbF
Applications
l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications
l Power Management for Netcom, Computing and Portable Applications
l Lead-Free
Benefits
l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage
and Current
VDSS
12V
HEXFET® Power MOSFET
RDS(on) max
15mΩ @VGS = 4.5V
ID
10A
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
SO-8
Absolute Maximum Ratings
Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
TJ , TSTG
Parameter Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor
Junction and Storage Temperature Range
Max. 12 ± 12 10 7.9 79 2.0 1.3 16
-55 to + 150
Units V V
A
W W mW/°C °C
Thermal Resistance
Symbol
Parameter
RθJL RθJA
Junction-to-Drain Lead Junction-to-Ambient
Notes through are on page 8 www.irf.com
Typ. ––– –––
Max. 42 62.5
Units °C/W
1
07/21/08
IRF7910PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol V(BR)DSS ∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) IDSS
Gate Threshold Voltage Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. 12 ––– ––– ––– 0.6 –––...
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