KTC9018

SEMICONDUCTOR TECHNICAL DATA KTC9018 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES Small Reverse Transfer Capacitance : Cre=0.65pF(Typ.). Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. High Transition Frequency : fT=800MHz(Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current VCBO VCEO VEBO IC IE Collector Power Dissipation *PC Junction Temperature Storage Temperature Range *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW Tj Tstg RATING 40 30 4 20 -20 625 400 150 -55 150 UNIT V V V mA mA mW L M C BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Collector-Base Time Constant ICBO IEBO hFE (Note) Cre fT CC rbb’ VCB=40V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=6V, f=1MHz, IE=0 VCE=10V, IC=8mA, f=100MHz VCE=6V, IE=-1mA, f=30MHz Noise Figure Power Gain NF VCE=6V, IE=-1mA, f=100MHz Gpe Note : hFE Classification E:40 59, F:54 80, G:72 108, H:97 146, I:130 198 MIN. 40 - 500 15 TYP. - 800 - MAX. 0.1 0.1 198 1.0 30 4.0 - UNIT A A pF MHz pS dB 2013. 7. 08...