KTD1413

SEMICONDUCTOR TECHNICAL DATA KTD1413 EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=3A. Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature VCBO VCEO VEB0 IC IB PC Tj Storage Temperature Range Tstg RATING 150 100 7 5 0.5 25 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5+0.1/-0.05 J 13.6 +_ 0.5 R K 3.7+_ 0.2 L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 N 2.54 +_ 0.1 P 6.8+_ 0.1 Q 4.5 +_ 0.2 R 2.6 +_0.2 HS 0.5 Typ 123 Q 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS EQUIVALENT CIRCUIT BASE =~ 3KΩ =~ 300Ω COLLECTOR EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Saturation Voltage Collector-Emitter Base-Emitter ICBO V(BR)CEO hFE(1) hFE(2) VCE(sat) VBE(sat) TEST CONDITION VCB=100V, IE=0 IC=10mA, IB=0 VCE=2V, IC=3A VCE=2V, IC=5A IC=3A, IB=3mA IC=3A, IB=3mA Switching Time Turn-on Time Storage Time Fall Time ton 20µS INPUT I B1 OUTPUT IB1 tstg I B2 IB2 16.7Ω tf I B1 =-I B2 =3mA DUTY CYCL...