SEMICONDUCTOR
TECHNICAL DATA
KTD1415
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER,...
SEMICONDUCTOR
TECHNICAL DATA
KTD1415
EPITAXIAL PLANAR
NPN TRANSISTOR
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS.
FEATURES High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A. Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING 100 100 5 7 0.2 30 150
-55 150
UNIT V V V A A W
K
A S
E
LL M
DD
NN
J
GF B P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2 F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5 R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
Q
1. BASE 2. COLLECTOR 3. EMITTER
TO-220IS
EQUIVALENT CIRCUIT
BASE
=~ 5KΩ
=~ 150Ω
COLLECTOR EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
ICBO IEBO V(BR)CEO hFE(1) hFE(2) VCE(sat)(1) VCE(sat)(2) VBE(sat)
Turn-on Time
ton
Switching Time
Storage Time
tstg
Fall Time
tf
TEST CONDITION VCB=100V, IE=0 VEB=5V, IC=0 IC=50mA, IB=0 VCE=3V, IC=3A VCE=3V, IC=7A IC=3A, IB=6mA IC=7A, IB=14mA IC=...