SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR.
FEATURES Complementary to KTB2510. Recommended ...
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER DARLINGTON
TRANSISTOR.
FEATURES Complementary to KTB2510. Recommended for 60W Audio Amplifier Output Stage.
KTD1510
TRIPLE DIFFUSED
NPN TRANSISTOR
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector PowerDissipation (Tc=25 ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING 160 150 5 10 1 100 150
-55 150
UNIT V V V A A W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage
ICBO IEBO V(BR)CEO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Transition Frequency
fT
Collector Output Capacitance
Cob
TEST CONDITION VCB=160V, IE=0 VEB=5V, IC=0 IC=30mA, IB=0 VCE=4V, IC=7A IC=7A, IB=7mA IC=7A, IB=7mA VCE=12V, IC=2A VCB=10V, f=1MHz, IE=0
MIN. -
150 5000
-
TYP. -
12000 50
230
MAX. 100 100 20000 2.5 3.0 -
UNIT A A V
V V MHz pF
2008. 4. 21
Revision No : 2
1/3
KTD1510
2008. 4. 21
Revision No : 2
2/3
KTD1510
2008. 4. 21
Revision No : 2
3/3
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