KTD2066

SEMICONDUCTOR TECHNICAL DATA KTD2066 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER APPLICATION. FEATURES High DC Current Gain : hFE=500 1500(IC=1A). Low Collector Saturation Voltage : VCE(sat)=0.35V(Max.) (IC=3A). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter-Base Voltage VEBO Collector Current DC Pulse IC ICP Base Current IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg RATING 100 80 7 5 8 1 2 30 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5+0.1/-0.05 J 13.6 +_ 0.5 R K 3.7+_ 0.2 L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 N 2.54 +_ 0.1 P 6.8+_ 0.1 Q 4.5 +_ 0.2 R 2.6 +_0.2 HS 0.5 Typ 123 Q 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS EQUIVALENT CIRCUIT COLLECTOR BASE ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Emitter Forward Voltage Transition Frequency Collector Output Capacitance ICBO IEBO V(BR)CEO hFE(1) hFE(2) VCE(sat) VBE(sat) VECF fT Cob Turn-on Time ton Switching Time Storage Time Tstg Fall Time tf TEST CONDITION VCB=80V, IE=0 VEB=7V, IC=0 I...