SEMICONDUCTOR
TECHNICAL DATA
KTD2424
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE DARLINGTON TRANSISTOR.
FEATURES H...
SEMICONDUCTOR
TECHNICAL DATA
KTD2424
EPITAXIAL PLANAR
NPN TRANSISTOR
GENERAL PURPOSE DARLINGTON
TRANSISTOR.
FEATURES High DC Current Gain : hFE=3000(Min.) (VCE=2V, IC=1A) Complementary to KTB1424.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING 80 60 10 3 0.5 25 150
-55 150
UNIT V V V A A W
K
A S
E
LL M
DD
NN
G B
J
F P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5 R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
Q
1. BASE 2. COLLECTOR 3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
Collector-Emitter Breakdown Voltage
V(BR)CEO
DC Current Gain
hFE(1) hFE(2)
Saturation Voltage
Collector-Emitter Base-Emitter
VCE(sat) VBE(sat)
TEST CONDITION VCB=80V, IE=0 VEB=10V, IC=0 IC=10mA, IB=0 VCE=2V, IC=1A VCE=2V, IC=3A IC=3A, IB=30mA IC=3A, IB=30mA
MIN. 60
3000 1000
-
TYP. -
MAX. 20 100 1.5 2.0
UNIT A A V
V
2007. 5. 22
Revision No : 1
1/1
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