KTD2854

SEMICONDUCTOR TECHNICAL DATA KTD2854 EPITAXIAL PLANAR NPN TRANSISTOR MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. FEATURES High DC Current Gain : hFE=2000(Min.) (VCE=2V, IC=1A) Low Saturation Voltage : VCE(sat)=1.5V(Max.) (IC=1A, IB=1mA) Complementary to KTB2234. MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC ICP IB PC Tj Storage Temperature Range Tstg RATING 100 100 8 2 3 0.5 1 150 -55 150 UNIT V V V A A W BD G JA R P DEPTH:0.2 C Q K FF HH M EM 123 HL NN 1. EMITTER 2. COLLECTOR 3. BASE DIM MILLIMETERS A 7.20 MAX B 5.20 MAX S C 0.60 MAX D 2.50 MAX E 1.15 MAX F 1.27 G 1.70 MAX H 0.55 MAX J 14.00+_ 0.50 K H L 0.35 MIN 0.75+_ 0.10 M4 N 25 O 1.25 P Φ1.50 Q 0.10 MAX R 12.50 +_ 0.50 S 1.00 TO-92L O D EQUIVALENT CIRCUIT COLLECTOR BASE −∼4kΩ −∼800Ω ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT Cob TEST CONDITION VCB=80V, IE=0 VEB=8V, IC=0 IC=10mA, IB=0 VCE=2V, IC=1A(Pulse) IC=1A, IB=1mA(Pulse) IC=1A, IB=1mA(Pulse) VCE=2V, IC=0.5A ...